Semiconductor integrated circuit with resistor and method for fabricating thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSoo-Ho Shin, Won-Suk Yang
Life of this patent
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Abstract
A resistor which have a stable resistance value and a method for fabricating the same without increasing the area of a semiconductor integrated circuit. To prevent a dishing phenomenon, the resistor is formed on the dummy gate electrode structure which have been formed in a peripheral circuit region and/or it is formed between a pair of dummy bit line structures. Regardless of a process condition the width and height of the resistor can be determined in a certain range with use of the capping layer and spacers of the dummy gate electrode structure and/or the capping layer and/or spacers of the dummy bit line structure.
Claims8
A method for fabricating a semiconductor integrated circuit comprising the steps of:
- preparing a semiconductor substrate including a cell array region and a peripheral circuit region;
- forming a first insulating layer on the semiconductor substrate;
- forming at least two or more dummy bit line structures on the first insulating layer belonging to the peripheral circuit region;
- forming a resistor which is limited by the dummy bit line structures adjacent to it and is made of a conductive material.
Dependencies are inferred from the claim text.