Semiconductor substrate, semiconductor device, and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuhito Matsukawa
Life of this patent
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Abstract
A semiconductor substrate that suppresses not only auto doping but also warpage can be provided by disposing an oxide film (4) at a position in a semiconductor substrate (1), so as to be apart from a main surface (1a) and a reverse surface (1b). The oxide film (4) can be so disposed that it is apart not less than 200 nm from the reverse surface (1b), and extends throughout the semiconductor substrate (1) in a thickness of 400 to 1000 nm, by implanting oxygen ion from the reverse surface (1b), followed by annealing.
Claims11
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor substrate having first and second surfaces, wherein said semiconductor substrate comprises silicon and contains boron in a concentration of 1×1018 to 1×1020 cm−3;
- and
- (b) forming an oxide film apart from said first and second surfaces and extending throughout said semiconductor substrate.
A method of manufacturing a semiconductor device comprising the steps of, in order:
- (a) providing a semiconductor substrate having first and second surfaces;
- (b) forming an oxide film apart from said first and second surfaces and extending throughout said semiconductor substrate, wherein said step (b) includes the steps of:
- (b-1) introducing oxygen ion into said semiconductor substrate from said second surface;
- and
- (b-2) performing heat treatment after said step (b-1);
- and
- (c) forming an epitaxial layer on said first surface.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing a semiconductor substrate having first and second surfaces;
- and
- (b) forming an oxide film apart from said first and second surfaces and extending throughout said semiconductor substrate, wherein the distance between said oxide film and said second surface corresponds to a thickness on the order of 10−3 of a thickness of said semiconductor substrate.
Dependencies are inferred from the claim text.