Manufacturing method of photomask and photomask
AssigneeHitachi, Ltd.
InventorsNorio Hasegawa, Toshihiko Tanaka, Joji Okada, Kazutaka Mori, Ko Miyazaki
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Abstract
In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.
Claims23
A method of manufacturing a binary photomask, comprising the steps of:
- (a) forming metal light-shielding patterns of said binary photomask, for integrated circuit pattern transfer, over a mask substrate;
- and
- (b) after the step (a), forming resist light-shielding patterns of said binary photomask, for integrated circuit pattern transfer, over the mask substrate.
The method according to 2, wherein the resist light-shielding patterns are removed by an oxygen plasma ashing method.
A method of manufacturing a binary photomask comprising the steps of:
- (a) depositing an antistatic film over a mask substrate;
- (b) forming metal light-shielding patterns, of said binary photomask, for integrated circuit pattern transfer, over the antistatic film;
- and
- (c) after the step (b), forming resist light-shielding patterns, of said binary photomask, for integrated circuit pattern transfer, over the antistatic film.
A method of manufacturing a binary photomask, comprising the steps of:
- (a) forming metal light-shielding patterns, of said binary photomask, for integrated circuit pattern transfer, over a mask substrate;
- (b) after the step (a), depositing a resist film for integrated circuit pattern transfer over the mask substrate;
- (c) depositing an antistatic film over the resist film;
- and
- (d) forming resist light-shielding patterns of said binary photomask.
Dependencies are inferred from the claim text.