Methods for synthesizing high-efficiency diamond and material and diamond material produced thereby
AssigneeP1 Diamond, Inc.
InventorJohn M. Pinneo
Life of this patent
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Abstract
A method for making diamond material comprises providing a deposition chamber; placing a substrate in said deposition chamber; sealing and evacuating said deposition chamber; admitting to said deposition chamber gases suitable for diamond deposition; heating said substrate to a diamond deposition temperature; igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate; and maintaining said plasma during a diamond deposition time period.
Claims16
A method for making diamond material comprising:
- providing a deposition chamber having a powered electrode spaced apart from a counterelectrode;
- placing a substrate in electrical contact with said powered electrode;
- sealing and evacuating said deposition chamber;
- admitting to said deposition chamber gases suitable for diamond deposition;
- heating said substrate to a diamond deposition temperature;
- applying RF energy at a frequency greater than 50 MHz and a power of at least 50 watts to said powered electrode to ignite a plasma between said powered electrode and said counterelectrode;
- increasing pressure of said gases in said deposition chamber to a diamond deposition pressure of greater than 20 Torr and increasing said power of said RF energy to maintain said plasma between said powered electrode and said counterelectrode to reach a diamond deposition power level;
- igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate;
- and
- maintaining said diamond deposition temperature, said diamond deposition pressure and said diamond deposition power level during a diamond deposition time period.
A method for making diamond material comprising:
- providing a deposition chamber having a powered electrode spaced apart from a counterelectrode;
- placing a substrate in electrical contact with said powered electrode;
- sealing and evacuating said deposition chamber;
- admitting to said deposition chamber gases suitable for diamond deposition;
- heating said substrate to a diamond deposition temperature;
- applying RF energy at a frequency greater than 50 MHz and a power of at least 50 watts to said powered electrode to ignite a plasma between said powered electrode and said counterelectrode;
- igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate;
- and
- maintaining said plasma during a diamond deposition time period.
Dependencies are inferred from the claim text.