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AssigneeInternational Business Machines Corporation
InventorsMichael D. Armacost, David M. Dobuzinsky, John C. Malinowski, Hung Y. Ng, Richard S. Wise, Chienfan Yu
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An anisotropic etching process for a nitride layer of a substrate, the process comprising using an etchant gas which comprises a hydrogen-rich fluorohydrocarbon, an oxidant and a carbon source. The hydrogen-rich fluorohydrocarbon is preferably one of CH3F or CH2F2, the carbon source is preferably one of CO2 or CO, and the oxidant is preferably O2. The fluorohydrocarbon is preferably present in the gas at approximately 7%-35% by volume, the oxidant is preferably present in the gas at approximately 1%-35% by volume, and the carbon source is preferably present in the gas at approximately 30%-92%.
An anisotropic etching process for a nitride layer on a substrate, the process comprising etching with an etchant gas comprised of a hydrogen-rich fluorohydrocarbon, diatomic oxygen, and a carbon source, wherein the fluorohydrocarbon is present in the gas at 7%-35% by volume, the diatomic oxygen is present in the gas at 1%-35% by volume, and the carbon source is present in the gas at 30%-92% by volume.
An anisotropic etching process for a nitride layer on a substrate, the process comprising etching with an etchant gas comprising a hydrogen-rich fluorohydrocarbon, diatomic oxygen, and a carbon source, wherein the process has a nitride-to-oxide selectivity of approximately 10:1;
Dependencies are inferred from the claim text.