Methods of forming magnetoresisitive devices
AssigneeMicron Technology, Inc.
InventorJoel A. Drewes
Life of this patent
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Abstract
The invention includes a method of forming a magnetoresistive device. A stack is formed. The stack comprises a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers. At least one of the first magnetic layer, second magnetic layer, and non-magnetic layer is etched with a primarily physical etch process in a reaction chamber to expose a portion of the etched layer. While the stack remains in the reaction chamber, a protective material is deposited over the exposed portion.
Claims39
A method of forming a magnetoresistive device, comprising:
- forming a stack comprising first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer, over the non-magnetic layer;
- etching at least, the second magnetic layer and the non-magnetic layer in a reaction chamber to expose portions of the second magnetic layer and the non-magnetic layer;
- and
- while the stack remains in the reaction chamber, depositing a protective material over the exposed portions.
A method of forming a magnetoresistive device, comprising:
- forming a stack comprising a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer;
- etching the second magnetic layer and the non-magnetic layer with a primarily physical etch process in a reaction chamber to pattern the second magnetic layer into a block having at least one exposed sidewall and to pattern the non-magnetic layer into a block having at least one exposed sidewall;
- and
- while the stack remains in the reaction chamber, depositing a protective material over the exposed sidewalls of the second magnetic layer block and the non-magnetic layer block.
A method of forming a magnetoresistive device, comprising:
- forming a stack comprising a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer;
- forming a patterned mask over the stack;
- etching the second magnetic layer and non-magnetic layer with an ion milling process in a reaction chamber to pattern the second magnetic layer and non-magnetic layer into a mass having an outer peripheral shape defined by the patterned mask;
- and
- while the stack remains in the reaction chamber, depositing a protective material to a thickness of at least 50 Å over at least a portion of the outer peripheral shape.
Dependencies are inferred from the claim text.