Plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsToshiaki Hongo, Tetsu Osawa
Life of this patent
Estimating the term…
Abstract
A plasma processing apparatus includes, in order to enhance the planar uniformity of the plasma density in a process space, a process chamber, an insulating plate attached airtightly to the ceiling of the process chamber, a planar antenna member placed above the insulating plate and including microwave radiation holes for transmitting therethrough microwave used for generating plasma, and a shield electrode member placed between the insulating plate and the planar antenna member for blocking out radiation of the microwave from the center and a part therearound of the planar antenna member.
Claims15
A plasma processing apparatus comprising:
- a process chamber including an opened ceiling and an internal space which can be evacuated;
- an electrically insulating plate airtightly attached to the ceiling of said process chamber;
- a mount base placed in said process chamber for mounting thereon a workpiece to be processed;
- a planar antenna member formed of an electrically conductive material and placed above said insulating plate and including a plurality of microwave radiation holes for transmitting therethrough microwave used for generating plasma, said microwave transmitted through said insulating plate into said process chamber;
- gas supply means for supplying a predetermined gas into said process chamber;
- and
- a shield electrode member placed between said insulating plate and said planar antenna member for partially blocking out radiation of the microwave from at least a central portion said planar antenna member, said shield electrode member being spaced from said planar antenna member.
A plasma processing apparatus comprising:
- a process chamber including an opened ceiling and an internal space which can be evacuated;
- an electrically insulating plate airtightly attached to the ceiling of said process chamber;
- a mount base placed in said process chamber for mounting thereon a workpiece to be processed;
- a planar antenna member formed of an electrically conductive material and placed above said insulating plate and including a plurality of microwave radiation holes for transmitting therethrough microwave used for generating plasma, said microwave transmitted through said insulating plate into said process chamber;
- gas supply means for supplying a predetermined gas into said process chamber;
- a shield electrode member placed between said insulating plate and said planar antenna member for partially blocking out radiation of the microwave from at least a central portion said planar antenna member, said shield electrode member being spaced from said planar antenna member;
- and
- a protection plate placed between said shield electrode member and said planar antenna member for preventing discharge from occurring between said shield electrode member and said planar antenna member.
A plasma processing apparatus comprising:
- a process chamber including an opened ceiling and an internal space which can be evacuated;
- an electrically insulating plate airtightly attached to the ceiling of said process chamber;
- a mount base placed in said process chamber for mounting thereon a workpiece to be processed;
- a planar antenna member formed of an electrically conductive material and placed above said insulating plate and including a plurality of microwave radiation holes formed at a predetermined pitch for transmitting therethrough microwave used for generating plasma, said microwave transmitted through said insulating plate into said process chamber;
- gas supply means for supplying a predetermined gas into said process chamber;
- and
- a shield electrode member placed between said insulating plate and said planar antenna member for blocking out radiation of the microwave from the center and a part therearound of said planar antenna member, said shield electrode member being spaced from said planar antenna member.
Dependencies are inferred from the claim text.