Excimer laser crystallization of amorphous silicon film
AssigneeLG.Philips LCD Co., Ltd.
InventorSe-Jin Chung
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Abstract
A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.
Claims14
A method of crystallizing an amorphous silicon layer, comprising the steps of:
- generating a laser beam having a stepped energy density distribution profile including a first energy density and a second energy density;
- irradiating an amorphous silicon layer of a first thickness with at least one exposure of the laser beam,
- wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.
Dependencies are inferred from the claim text.