Process control using three dimensional reconstruction metrology

A method of controlling microelectronic device manufacturing comprising:

• developing a photoresist feature on a semiconductor substrate;
• using a scanning electron microscope to develop secondary electron signal intensity information I(x,y) corresponding to the photoresist feature;
• developing data corresponding to a three dimensional representation of the photoresist feature from the secondary electron signal intensity information;
• developing a multiple parameter characterization of at least one critical dimension of the three dimensional representation;
• and
• controlling a process in response to the multiple parameter characterization.

A method of controlling a semiconductor device manufacturing process comprising:

• developing intensity information I(x,y) corresponding to a feature on a surface;
• developing data corresponding to a three dimensional representation of the feature from the intensity information;
• developing a multiple parameter characterization of at least one critical dimension of the three dimensional representation;
• and
• comparing the multiple parameter characterization to a predetermined criterion.

An apparatus for controlling a process, the apparatus comprising:

• a means for producing intensity data IN(x,y) corresponding to a feature on a surface;
• a means for producing data corresponding to a three dimensional representation of the feature as a function of the intensity data IN(x,y);
• a means for developing a multiple parameter characterization of at least one critical dimension of the three dimensional representation;
• and
• a processing apparatus responsive to the multiple parameter characterization.