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US 6,649,997 B2Granted
Semiconductor device having fuses or anti-fuses
AssigneeKabushiki Kaisha Toshiba
InventorHidetoshi Koike
Life of this patent
Estimating the term…
Abstract
A laminated dummy pattern formed of plural metals including aluminum and tungsten is formed below a fuse or anti-fuse and an influence by application of laser energy at the time of laser blow on an wiring or element can be prevented.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- a multi-layered wiring structure formed on said semiconductor substrate;
- said multi-layered wiring structure including wirings having fuses formed in a predetermined wiring layer and a dummy pattern formed of a metal laminated film formed in a wiring layer directly below the fuses, the dummy pattern being not connected to the fuses and kept at a floating state;
- and
- said fuses each having a laser-blow portion to which a laser beam is applied, and the dummy pattern being positioned at a point where it receives energy from said fuses in case of an application of the laser beam,
- wherein when said fuses are blown by the laser beam, only that portion blown by the laser beam is cut while the dummy pattern, positioned directly below the fuses blown by the laser beam is kept in a non-cut state.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a multi-layered wiring substructure formed on said semiconductor substrate;
- said multi-layered wiring structure including wirings having fuses or anti-fuses formed in a predetermined wiring layer and a dummy pattern formed of a metal laminated film formed in a wiring layer directly below the fuses or anti-fuses, the dummy pattern being not connected to the fuses or anti-fuses and kept at a floating state;
- said fuses or anti-fuses each having a laser-blow portion to which a laser beam is applied, and the dummy pattern being positioned at a point where it receives energy from said fuses or anti-fuses in case of an application of the laser beam;
- and
- said dummy pattern having a multi-layered structure formed of at least two different metals,
- wherein when said fuses or anti-fuses are blown by the laser beam, only that portion blown by the laser beam is cut or connected while the dummy pattern, positioned directly below the fuses or anti-fuses blown by the laser beam is kept in a non-cut or non-connected state.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a multi-layered wiring structure formed on said semiconductor substrate;
- a passivation film formed on said multi-layered wiring structure;
- said multi-layered wiring structure including wirings having fuses formed in a predetermined wiring layer and a dummy pattern formed in a wiring layer directly below the fuses, the dummy pattern being not connected to the fuses and kept at a floating state, windows having openings formed above the fuses being formed in said passivation film and said dummy pattern being formed with an area not larger than an area of each of the windows;
- and
- said fuses each having a laser-blow portion to which a laser beam is applied, and the dummy pattern being positioned at a point where it receives energy from said fuses in case of an application of the laser beam,
- wherein when said fuses are blown by the laser beam, only that portion blown by the laser beam is cut while the dummy pattern, positioned directly below the fuses blown by the laser beam is kept in a non-cut state.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a multi-layered wiring structure formed on said semiconductor substrate;
- a passivation film formed on said multi-layered wiring structure;
- said multi-layered wiring structure including wirings having fuses or anti-fuses formed in a predetermined wiring layer and a dummy pattern formed in a wiring layer directly below the fuses or anti-fuses, the dummy pattern being not connected to the fuses or anti-fuses and kept at a floating state, windows having openings formed above the fuses or anti-fuses being formed in said passivation film and said dummy pattern being formed with an area not larger than an area of each of the windows;
- said fuses or anti-fuses each having a laser-blow portion to which a laser beam is applied, and the dummy pattern being positioned at a point where it receives energy from said fuses or anti-fuses in case of an application of the laser beam;
- and
- said dummy pattern having a multi-layered structure formed of at least two different metals,
- wherein when said fuses or anti-fuses are blown by the laser beam, only that portion blown by the laser beam is cut or connected while the dummy pattern, positioned directly below the fuses or anti-fuses blown by the laser beam is kept in a non-cut or non-connected state.
5 more elements
Dependencies are inferred from the claim text.