High breakdown voltage semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMotoshige Kobayashi, Hideki Nozaki
Life of this patent
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Abstract
A semiconductor device comprises a first base layer for providing a PT-IGBT or IEGT structure, which includes a buffer layer and a collector layer provided in the buffer layer. A first activation rate, defined by an activated first conductivity type impurity density [cm−2] in the buffer layer due to SR analysis/a first conductivity type impurity density [cm−2] in the buffer layer due to SIMS analysis is given by 25% or more, and a second activation rate, defined by an activated second conductivity type impurity density [cm−2] in the collector layer due to SR analysis/a second conductivity type impurity density [cm−2] in the collector layer duet to SIMS analysis is given by more than 0% and 10% or less.
Claims4
A semiconductor device, comprising:
- a first base layer having a first conductivity type, said first base layer having first and second surfaces and further having a high resistance;
- a second base layer, provided in said first surface, having a second conductivity type;
- an emitter layer, provided in said second base layer, having said first conductivity type;
- a gate electrode provided through a gate insulating film over said second base layer disposed between said emitter layer and said first base layer;
- a buffer layer, formed in said second surface, having said first conductivity type and further having a high impurity concentration;
- a first activation rate, defined by an activated first conductivity type impurity density [cm−2] in said buffer layer due to SR analysis/a first conductivity type impurity density [cm−2] in said buffer layer due to SIMS analysis, being 25% or more;
- a collector layer, provided in said buffer layer, having said second conductivity type;
- and
- a second activation rate, defined by an activated second conductivity type impurity density [cm−2] in said collector layer due to SR analysis/a second conductivity type impurity density [cm−2] in said collector layer due to SIMS analysis, being more than 0% and 10% or less.
Dependencies are inferred from the claim text.