Semiconductor device with MOS transistors sharing electrode
AssigneeSony Corporation
InventorTakashi Noguchi
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Abstract
A semiconductor device including: a gate electrode made from silicon-germanium or germanium; a first semiconductor region formed under the gate electrode with a first gate insulating film between the first semiconductor region and the gate electrode; and a second semiconductor region formed over the gate electrode with a second gate insulating film between the second semiconductor region and the gate electrode, wherein a first conductivity type MOS transistor includes the first semiconductor region, the first gate insulating film, and the gate electrode, and a second conductivity type MOS transistor includes the second semiconductor region, the second gate insulating film, and the gate electrode.
Claims14
A semiconductor device comprising:
- a gate electrode made from silicon-germanium or germanium;
- a first semiconductor region formed under said gate electrode with a first gate insulating film between said first semiconductor region and said gate electrode;
- and
- a second semiconductor region formed over said gate electrode with a second gate insulating film between said second semiconductor region and said gate electrode,
- wherein a first conductivity type MOS transistor is comprised of said first semiconductor region, said first gate insulating film, and said gate electrode, and a second conductivity type MOS transistor is comprised of said second semiconductor region, said second gate insulating film, and said gate electrode.
A semiconductor device comprising:
- a first conductivity type MOS transistor and a second conductivity type MOS transistor, which are stacked on the same substrate,
- wherein,
- a gate electrode common to said first and second conductivity type MOS transistors is made from silicon-germanium, and
- a content of germanium to silicon in said silicon-germanium is set to optimize a work function of said gate electrode.
A semiconductor device comprising:
- a gate electrode;
- a first semiconductor region formed under said gate electrode with a first gate insulating film between said first semiconductor region and said gate electrode;
- and
- a second semiconductor region formed over said gate electrode with a second gate insulating film between said second semiconductor region and said gate electrode,
- wherein,
- a first conductivity type MOS transistor is comprised of said first semiconductor region, said first gate insulating film, and said gate electrode, and a second conductivity type MOS transistor is comprised of said second semiconductor region, said second gate insulating film, and said gate electrode, and
- said gate electrode has a stacked structure of a silicon-germanium layer or a germanium layer, a silicon layer, and a silicon-germanium layer or a germanium layer.
A semiconductor device comprising:
- a single gate electrode;
- and
- a first semiconductor region and a second semiconductor region adjacently formed on both sides of said single gate electrode with gate insulating films between the gate electrode and the first and second semiconductor regions,
- wherein, a first conductivity type MOS transistor is comprised of said first semiconductor region, said gate insulating film, and said single gate electrode, and a second conductivity type MOS transistor is comprised of said second semiconductor region, said gate insulating film, and said single gate electrode, and
- said single gate electrode comprises germanium or silicon germanium.
A method of fabricating a semiconductor device, comprising the steps of:
- forming an insulating layer on a substrate;
- forming a first semiconductor region on said insulating layer;
- forming a first gate insulating film on said first semiconductor region;
- forming a gate electrode layer made from silicon-germanium or germanium on said first gate insulating film in such a manner as to be stacked on said first semiconductor region;
- activating said gate electrode layer;
- forming a second gate insulating film on said activated gate electrode layer;
- and
- forming a second semiconductor region on said second gate insulating film.
Dependencies are inferred from the claim text.