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US 6,649,967 B2Granted
Non-volatile memory device with a floating gate having a tapered protrusion
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsKee Yeol Na, Wook Hyun Kwon
Life of this patent
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Abstract
A non-volatile memory device includes a floating gate formed over a semiconductor substrate. At one end of the floating gate, there is a tapered protrusion having a horn-like or bird's beak shape. A control gate covers the floating gate except for the tapered protrusion. Sidewall spacers are formed adjacent to the floating gate and the control gate. An erasing gate is formed over the tapered protrusion of the floating gate.
Claims15
A non-volatile memory device comprising:
- a semiconductor substrate;
- a first insulator over a portion of the substrate;
- a floating gate over the first insulator, the floating gate having a tapered protrusion at one end thereof;
- a second insulator over the floating gate, but not covering the tapered protrusion;
- a control gate over the second insulator, but not covering the tapered protrusion;
- a plurality of sidewall spacers adjacent to side portions of the floating gate and the control gate;
- a third insulator on the floating gate and adjacent to the tapered protrusion;
- a tunneling insulation insulator on a portion of the floating gate and having one of the plurality of sidewall spacers formed partially thereon;
- and
- an erasing gate over the tapered protrusion of the floating gate.
7 more elements
A non-volatile memory device comprising:
- a substrate;
- a floating gate above the substrate, the floating gate having a first end and a second end, the second end having a tapered portion;
- a control gate above the first end of the floating gate, the control gate having a first end and a second end;
- a cap insulator above the control gate, the cap insulator having a first end and a second end;
- a first sidewall spacer abutting the first end of the floating gate, the first end of the control gate and the first end of the cap insulator;
- a second sidewall spacer abutting the second end of the control gate and the second end of the cap insulator;
- a third sidewall spacer abutting the second end of the floating gate;
- a tunneling insulator on the second end of and adjacent to the tapered portion of the floating gate, the tunneling insulator being between the second and third sidewall spacers;
- and
- an erasing gate above the tunneling insulator and the second end of the floating gate.
7 more elements
Dependencies are inferred from the claim text.