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US 6,649,964 B2Granted
Body-to-substrate contact structure for SOI device and method for fabricating same
AssigneeHynix Semiconductor Inc.
InventorYoung-Hoon Kim
Life of this patent
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Abstract
The semiconductor substrate body-substrate contact structure for a SOI device includes an SOI substrate having a semiconductor substrate, a buried insulating film formed on an upper surface of the semiconductor substrate, and a semiconductor body layer formed on an upper surface of the buried insulating film. The SOI substrate includes a trench exposing an upper surface of the semiconductor substrate, and semiconductive side wall spacers are formed on side walls of the trench. A device isolation insulating film is formed in the trench.
Claims5
A semiconductor substrate body-substrate contact structure for a SOI device, comprising:
- a SOI substrate having a semiconductor substrate base layer;
- a buried insulating film formed on an upper surface of the semiconductor substrate base layer;
- a semiconductor body layer formed on an upper surface of the buried insulating film;
- a trench exposing an upper surface of the semiconductor substrate base layer and extending through the semiconductor body layer and the buried insulating film;
- semiconductive side wall spacers formed on side walls of the trench;
- and
- a device isolation insulating film formed in the trench.
4 more elements
Dependencies are inferred from the claim text.