Method of calibrating a semiconductor wafer drying apparatus

A method of calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a liquid and capable of receiving semiconductor wafers, the method comprising:

• selecting a test heater temperature and a test processing time,
• placing a first set of wafers in the vessel,
• operating the heater at said test heater temperature so that a vapor cloud is created in the vessel,
• monitoring the presence of the vapor cloud above said first set of wafers during said test processing time, wherein substantial envelopment of the first set of wafers is achieved when the vapor cloud is detected above said first set of wafers,
• said monitoring step including subjecting at least some of said first set of wafers to epitaxial treatment or chemical vapor deposition subsequent to said operating step and thereafter measuring defects in the wafers, and
• based on said monitoring step, adjusting at least one of said test heater temperature and said test processing time to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in said drying apparatus to inhibit defects in each set of wafers.

A method of calibrating a semiconductor wafer drying apparatus including a heater, a vessel containing a liquid, a temperature sensor and capable of receiving semiconductor wafers, the method comprising:

• selecting a test heater temperature and a test processing time,
• placing a first set of wafers in the vessel,
• operating the heater at said test heater temperature so that a vapor cloud is created in the vessel,
• monitoring the temperature sensor inside said vessel for substantial envelopment of said first set of wafers by the vapor cloud during said test processing time, the temperature sensor being positioned above said first set of wafers, and
• based on said monitoring step, adjusting at least one of said test heater temperature and said test processing time to establish operating parameters including an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so that the successive sets of wafers are substantially enveloped by the vapor cloud for a target time segment of at least about 30 seconds.