Method of etching a substrate
AssigneeTrikon Holdings Limited
InventorsMark Puttock, Graham Richard Powell, Kevin Powell, David Andrew Tossell, Matthew Peter Martin
Life of this patent
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Abstract
This invention relates to a method of etching a substrate in a chamber on an electrostatic chuck, which defines a gas cooling path at the substrate/chuck interface. The method includes electrostatically clamping the substrate on the chuck with gas in the gas path being at a first pressure; etching the substrate at a first power; detecting the end point for the etc; reducing the gas pressure to a second pressure at which the substrate floats on a gas; and over etching the wafer at a second power, which is lower than the first power.
Claims16
A method of etching a substrate in a chamber on an electrostatic chuck which defines a gas cooling path at the substrate chuck interface including:
- i. electrostatically clamping the substrate on the chuck with the gas in the gas path being at a first pressure;
- ii. etching the substrate at a first power;
- iii. detecting the end point for the etch;
- iv. reducing the gas pressure to a second pressure at which the substrate floats on the gas;
- and
- v. over-etching the wafer at a second power, which is lower than the first power.
A method of etching a substrate in a chamber on an electrostatic chuck which defines a gas cooling path at the substrate check interface including:
- i. electrostatically clamping the substrate on the chuck with the gas in the gas path being at a first pressure;
- ii. etching the substrate at a first power;
- iii. detecting the end point for the etch;
- iv. reducing the gas pressure to a second pressure at which the substrate floats on the gas;
- and
- v. over-etching the wafer at a second power, which is lower than the first power, the method including laterally restraining the substrate at least during steps iv and/or v.
A method of etching a substrate in a chamber on an electrostatic chuck which defines a gas cooling path at the substrate chuck interface including:
- i. electrostatically clamping the substrate on the chuck with the gas in the gas path being at a first pressure;
- ii. etching the substrate at a first power;
- iii. detecting the end point for the etch;
- iv. reducing the gas pressure to a second pressure at which the substrate floats on the gas;
- and
- v. over-etching the wafer at a second power, which is lower than the first power wherein the second power is sufficiently low to create no more heat than an be substantially removed by the gas at the second pressure.
Dependencies are inferred from the claim text.