Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum
AssigneeMicron Technology, Inc.
InventorAllen McTeer
Life of this patent
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Abstract
The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a wafer/device to provide a roughened surface that significantly reduces reflectivity to improve the accuracy and definition provided by optical lithography processes.
Claims3
A method of reducing reflectance from a semiconductor wafer, the method comprising:
- providing a first layer comprising aluminum on the semiconductor wafer;
- providing a second layer comprising titanium above the first layer;
- and
- annealing the first and second layers in a non-reactive atmosphere, wherein the reflectance of exposed portions of the annealed first and second layers is less than about 10% over wavelengths of about 100 to about 450 nm.
A method of reducing reflectance from a semiconductor wafer, the method comprising:
- providing a first layer comprising aluminum on the semiconductor wafer;
- providing a second layer comprising titanium above the first layer;
- and
- annealing the first and second layers in a nitrogen atmosphere, wherein the reflectance of exposed portions of the annealed first and second layers is less than about 10% over wavelengths of about 100 to about 450 nm.
A method of reducing reflectance from a semiconductor wafer, the method comprising:
- providing a first layer comprising aluminum on the semiconductor wafer;
- providing a second layer comprising titanium above the first layer;
- and
- annealing the first and second layers at a temperature of about 350 deg C. to about 550 deg C., wherein the reflectance of exposed portions of the annealed first and second layers is less than about 10% over wavelengths of about 100 to about 450 nm.
Dependencies are inferred from the claim text.