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US 6,649,496 B2Granted
Production method for semiconductor crystal
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
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Abstract
After the surface of a Si substrate (1) has been pretreated, an SiGeC layer (2) is formed on the Si substrate (1) using an ultrahigh vacuum chemical vapor deposition (UHV-CVD) apparatus. During this process step, the growth temperature of the SiGeC layer (2) is set at 490° C. or less and Si2H6, GeH4 and SiH3CH3 are used as Si, Ge and C sources, respectively, whereby the SiGeC layer (2) with good crystallinity can be formed.
Claims6
A method for producing a semiconductor crystal, comprising the steps of:
- (a) introducing a source gas containing silicon (Si), a source gas Containing germanium (Ge) and a source gas containing carbon (C) into a container in which a substrate is held;
- and
- (b) thermally dissolving the source gases, thereby producing a semiconductor crystal containing Si atoms, Ge atoms and C atoms on the substrate,
- wherein the thermal dissolution step is carried out at a temperature between 300° C. to 490° C.
1 more element
Dependencies are inferred from the claim text.