SRAM cell design for soft error rate immunity
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
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Abstract
A new method to form a SRAM memory cell in an integrated circuit device is achieved. The method comprises providing a bi-stable flip-flop cell having a data storage node and a data bar storage node. A first capacitor is formed coupled to the data bar storage node, and a second capacitor is formed coupled to the data storage node. The first and second capacitors comprise a first conductor layer overlying a second conductor layer with a dielectric layer therebetween. One of the first and second conductor layers is coupled to ground. A new SRAM device is disclosed.
Claims13
A method to form a SRAM memory cell in an integrated circuit device comprising:
- providing a bi-stable flip-flop cell having a data storage node and a data bar storage node;
- and
- forming a first capacitor coupled to said data bar storage node and a second capacitor coupled to said data storage node wherein said first and second capacitors comprise a first conductor layer overlying a second conductor layer with a dielectric layer therebetween and wherein one of said first and second conductor layers is coupled to ground.
A method to form a SRAM memory cell in an integrated circuit device comprising:
- providing a bi-stable flip-flop cell having a data storage node and a data bar storage node;
- and
- forming a first capacitor coupled to said data bar storage node and a second capacitor coupled to said data storage node wherein said first and second capacitors comprise a first metal layer overlying a second metal layer with a dielectric layer therebetween, wherein one of said first and second metal layers is coupled to ground, and wherein said first and second capacitors are formed by a method comprising:
- depositing said dielectric layer overlying said first metal layer;
- depositing said second metal layer overlying said dielectric layer;
- defining a capacitor mask overlying planned capacitor areas;
- and
- removing said second metal layer and said dielectric layer from all areas not covered by said capacitor mask.
Dependencies are inferred from the claim text.