Method for producing nanostructures in thin films
AssigneeForschungszentrum Julich GmbH
InventorsSiegfried Mantl, Ludger Kappius, Qing-Tai Zhao, Armin Antons
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Abstract
The invention relates to a method for producing a layer with a sub-micrometre structure on a substrate. First, a layer is formed on the substrate. Agents for creating elastic strains are then formed in at least one predetermined position on the layer and the layer is then subjected to a strain-dependent solid-state reaction. This results in material separating and consequently, in the layer being structured in this position.
Claims6
A method of producing a layer having a structure in a form of at least one line having a submicrometer width, comprising the steps of:
- (a) providing a silicon support or a glass support as a substrate;
- (b) depositing a pure metal film on said substrate;
- (c) applying to said pure metal film a mask layer and structuring said mask layer so that an edge of the mask layer is formed along a location for said line, thereby forming a layer system consisting essentially of said substrate, said film and said layer;
- and
- (d) subjecting said layer system to a thermal treatment at a temperature and for a length of time sufficient to generate tension in said film to produce a tension-dependent separation in said film below said edge with a submicrometer width forming said line solely by the action of the temperature for the said time.
A method of producing a layer having a structure in a form of at least one line having a submicrometer width, comprising the steps of:
- (a) providing a silicon support or a glass support as a substrate;
- (b) depositing a pure metal film on said substrate;
- (c) applying to said pure metal film a mask layer and structuring said mask layer so that an edge of the mask layer is formed along a location for said line, thereby forming a layer system consisting essentially of said substrate, said film and said layer;
- and
- (d) subjecting said layer system to a thermal treatment at a temperature and for a length of time sufficient to generate tension in said film to produce a tension-dependent separation in said film below said edge with a submicrometer width forming said line, said metal film being composed of a metal selected from the group which consists of cobalt, titanium, nickel, palladium, tungsten, tantalum and niobium, said mask layer is composed of a material selected from the group which consists of SiO2 and Si3N4, said layer system being subjected in step (d) to a temperature having a maximum of 750° C. for a period sufficient to produce said separation.
Dependencies are inferred from the claim text.