Semiconductor device
AssigneeNEC Electronics Corporation
InventorMinoru Higuchi
Life of this patent
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Abstract
A semiconductor device including an insulated gate field effect transistor (IGFET) has been disclosed. The IGFET may be formed in an element region defined by an element isolation region (14) formed on a semiconductor substrate (8). A covering portion (10) may cover at least a portion of an end (22) of the element region. Covering portion (10) may be formed essentially of the same material as a side wall (10) of a gate (12) of the IGFET. A source/drain region (18) may be formed using gate (12) and covering portion (10) as a mask. In this way, a distance between an intra-substrate high-concentration contour line (20) and source/drain region (18) in area of end (22) of the element region may remain sufficient and an IGFET breakdown voltage may be improved.
Claims13
A semiconductor device including an insulated gate field effect transistor (IGFET) formed in a element region defined by an element isolation region, comprising:
- a covering portion that covers at least an end portion of the element region and formed from substantially the same material as a side wall formed on a side surface of a gate of the IGFET, the covering portion being a source/drain region formation mask for the IGFET.
A semiconductor device, comprising:
- a non-volatile memory transistor, a first insulated gate field effect transistor (IGFET), and a high breakdown-voltage IGFET;
- the high breakdown-voltage IGFET is formed in an element region defined by an element isolation region;
- and
- a covering portion that covers at least an end of the element region wherein the covering portion is formed from essentially the same material as a side wall formed on a side surface of a gate of at least one of the group consisting of the non-volatile memory transistor, the first IGFET and the high breakdown-voltage IGFET, and the covering portion provides a mask during the formation of a source/drain region of the high breakdown-voltage IGFET.
Dependencies are inferred from the claim text.