Method of forming a silicon nitride layer on a substrate
AssigneeApplied Materials, Inc.
InventorsMichael X. Yang, Chien-Teh Kao, Karl Littau, Steven A. Chen, Henry Ho, Ying Yu
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Abstract
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.
Claims26
A method of depositing a film of silicon nitride comprising:
- placing a single substrate in a substrate low pressure chemical vapor deposition chamber;
- generating a pressure to from about 100 Torr to about 500 Torr and heating the substrate to a temperature of from about 600° C. to about 800° C.;
- and
- providing a gas mixture comprising a silicon source gas comprising a silicon hydride and a nitrogen source gas into the chamber.
A method of forming a silicon nitride layer on a semiconductor wafer, comprising the steps of:
- locating a semiconductor wafer on a susceptor within a processing chamber;
- mixing at least three gases comprising
- a carrier gas selected from the group consisting of H2, N2, He, and Ar,
- a nitrogen source gas, and
- a silicon source gas comprising a silicon hydride;
- introducing the mixture of gases into the semiconductor processing chamber;
- exposing the wafer to the mixture;
- and
- maintaining a pressure in the semiconductor processing chamber in the range of 100 to 500 Torr.
A method of forming a silicon nitride layer on a semiconductor wafer, comprising the steps of:
- locating the semiconductor wafer on a susceptor within a semiconductor processing chamber;
- mixing at least three gases in the semiconductor processing chamber, the at least three gasses comprising
- a carrier gas,
- a NH3 source gas, and
- a silicon source gas selected from the group consisting of silane (SiH4), dichlorosilane (SiH2Cl2), and disilane (Si2H6);
- exposing the semiconductor wafer to the mixture of gases;
- and
- maintaining a pressure in the semiconductor processing chamber in the range of 100 to 500 Torr.
A method of depositing a film of silicon nitride comprising:
- placing a single substrate in a substrate low pressure chemical vapor deposition chamber;
- generating a pressure from about 100 Torr to about 500 Torr and heating the substrate to a temperature of about 600° C. to about 800° C.;
- and
- providing a gas mixture comprising a silicon source gas and a nitrogen source gas into the chamber;
- and
- the silicon source gas is selected from the group consisting of silane (SiH4) and disilane (Si2H6).
A method of depositing films of silicon nitride onto a substrate in a chemical vapor deposition chamber, comprising:
- (a) supporting a single substrate in the chamber;
- (b) adjusting the pressure in the chamber form about 100 Torr to about 500 Torr and heating the substrate to a temperature from about 600° C. to 800° C.;
- and
- (c) passing a silicon source gas comprising a silicon hydride into the chamber.
Dependencies are inferred from the claim text.