Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
AssigneeHitachi, Ltd.
InventorsToshihiko Tanaka, Norio Hasegawa, Tsuneo Terasawa
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Abstract
A pattern is transferred to a resist film on a wafer by a reduction projection exposure method using a half-tone phase-shift mask in which is formed a half-tone phase-shifter pattern including a thin-film pattern functioning as an attenuator and a resist pattern functioning as the photosensitive composition for phase adjustment. This method improves the accuracy of dimensions of the pattern transferred to the wafer.
Claims17
A method for manufacturing semiconductor devices, comprising the steps of:
- determining whether to use a first half-tone phase-shift mask having a half-tone phase-shifter pattern with an organic film and an attenuator film formed on a first mask substrate or a second half-tone phase-shift mask having a half-tone phase-shifter pattern of an inorganic film formed on a second mask substrate, said determination made according to the production quantity of said semiconductor devices;
- preparing a semiconductor substrate having a photosensitive film;
- and
- exposing the substrate using said first or said second half-tone phase-shift mask.
A method for manufacturing semiconductor devices, comprising the steps of:
- determining whether to use a first half-tone phase-shift mask having a half-tone phase-shifter pattern with an organic film and an attenuator film formed on a first mask substrate or a second half-tone phase-shift mask having a half-tone phase-shifter pattern of an inorganic film formed on a second mask substrate, said determination made according to the type of device structure being formed;
- preparing a semiconductor substrate having a photosensitive film;
- and
- exposing the substrate using said first or said second half-tone phase-shift mask.
A multi-stage method for manufacturing semiconductor devices including a rise time of mass production stage and a mass production stage, comprising the steps of:
- preparing a semiconductor substrate having a photosensitive film;
- and
- exposing the substrate using a first half-tone phase-shift mask having a half-tone phase-shifter pattern with an organic film and an attenuator film formed on a first mask substrate and a second half-tone phase-shift mask having a half-tone phase-shifter pattern of an inorganic film formed on a second mask substrate,
- wherein said first half-tone phase-shift mask is used at the rise time of mass production of said semiconductor devices, and the second half-tone phase-shift mask is used at the time of mass production of said semiconductor devices.
A method for manufacturing semiconductor devices having a master layer and a custom layer, comprising the steps of:
- preparing a semiconductor substrate having a photosensitive film;
- and
- exposing the substrate using a reduction projection exposure system,
- wherein patterns of the custom layer are formed using a first half-tone phase-shift mask having a half-tone phase-shifter pattern with an organic film and an attenuator film formed on a first mask substrate,
- further wherein patterns of the master layer are formed using a photomask having a metal film as a shading body for exposure light or a half-tone phase-shift mask having a half-tone phase-shifter pattern of an inorganic film formed on a second mask substrate.
Dependencies are inferred from the claim text.