Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a semiconductor layer on a substrate;
• forming a gate insulating layer on the semiconductor layer, the gate insulating layer;
• covering an entire top surface of the semiconductor layer opposite the substrate and side surfaces of the semiconductor layer;
• selectively forming a metal layer on the semiconductor layer with the gate insulating layer in between;
• selectively doping an impurity into the semiconductor layer using the metal layer as a mask;
• forming an energy absorption layer so as to cover the metal layer and the gate insulating layer that covers the entire top surface of the semiconductor layer opposite the substrate and the side surfaces of the semiconductor layer, the energy absorption layer not directly contacting the semiconductor layer;
• and
• activating the impurity doped into the semiconductor layer by irradiating an energy beam from the energy absorption layer side,
• wherein the energy absorption layer is formed of one or more kinds of materials selected from molybdenum (Mo), tantalum (Ta), tungsten (W), nickel (Ni), and chrome (Cr).