Self-aligned fabrication method for a semiconductor device
AssigneeGTRAN, Inc.
InventorRajashekhar Pullela
Life of this patent
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Abstract
One embodiment of the present invention provides a method of fabricating a semiconductor device including the steps of forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a mask over a first portion the second semiconductor layer; removing a second portion of the second semiconductor layer not covered by the mask; forming a first electrical connector on the first semiconductor layer; and forming a second electrical connector on the first portion of the second semiconductor layer.
Claims89
A method of fabricating a semiconductor device comprising the steps of:
- forming a first semiconductor layer;
- forming a second semiconductor layer over the first semiconductor layer;
- forming a mask over a first portion of the second semiconductor layer;
- removing a second portion of the second semiconductor layer not covered by the mask to form a semiconductor mesa;
- forming a first electrical connector on the first semiconductor layer self-aligned with respect to the semiconductor mesa;
- and forming a second electrical connector on the first portion of the second semiconductor layer, wherein the second electrical connector is aligned with respect to the semiconductor mesa after the first connector is self-aligned with respect to the semiconductor mesa.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first semiconductor layer;
- forming a second semiconductor layer over the first semiconductor layer;
- covering a first portion of the second semiconductor layer;
- removing a second portion of the second semiconductor layer not covered in the covering step to form a semiconductor mesa;
- attaching a first electrical contact to the first semiconductor layer, wherein the first electrical contact is self-aligned with respect to the semiconductor mesa;
- and
- attaching a second electrical contact to the first portion of the second semiconductor layer, wherein the second electrical contact is aligned with respect to the semiconductor mesa after the first electrical contact is aligned.
A method of fabricating a semiconductor device comprising the steps of:
- forming a first semiconductor layer;
- forming a second semiconductor layer over the first semiconductor layer;
- selectively removing a portion of the second semiconductor layer to form a semiconductor mesa;
- forming a first electrical connector on the first semiconductor layer that is self-aligned with respect to the semiconductor mesa;
- and
- forming a second electrical connector to the semiconductor mesa, wherein the second electrical connector is aligned after the first electrical connector is aligned with respect to the semiconductor mesa and is the same size or smaller than the semiconductor mesa.
Dependencies are inferred from the claim text.