Method for fabricating a non-volatile semiconductor memory cell with a separate tunnel window
AssigneeInfineon Technologies AG
InventorsPeter Wawer, Oliver Springmann, Konrad Wolf, Olaf Heitzsch, Kai Huckels, Reinhold Rennekamp, Mayk Röhrich, Elard Stein Von Kamienski, Christoph Kutter, Christoph Ludwig
Life of this patent
Estimating the term…
Abstract
A method for producing a non-volatile semiconductor memory cell with a separate tunnel window cell includes the step of forming a tunnel zone in a late implantation step by performing a tunnel implantation with the aid of a tunnel window cell as a mask. The resulting memory cell has a small area requirement and a high number of program/clear cycles.
Claims10
A method for fabricating a non-volatile semiconductor memory cell having a separate tunnel window, the method which comprises:
- forming a tunnel window cell by forming a tunnel zone, a tunnel layer, a tunnel window memory layer, a dielectric tunnel window layer and a tunnel window control electrode layer;
- forming a transistor memory cell with a channel zone, a gate layer, a memory layer, a dielectric layer and a control electrode layer;
- forming the tunnel window cell and the transistor memory cell in active regions of a semiconductor substrate such that the transistor memory cell and the tunnel window cell are separated from one another;
- forming a connecting region for connecting the tunnel window cell with the transistor memory cell in an inactive region of the semiconductor substrate;
- and
- doping the tunnel zone in an active region of the tunnel window cell subsequent to forming the tunnel layer.
Dependencies are inferred from the claim text.