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US 6,645,707 B2Granted
Device manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsMitsuaki Amemiya, Shunichi Uzawa, Keiko Chiba, Yutaka Watanabe
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Abstract
A device manufacturing method includes a first exposure step for executing a multiple exposure of a first layer of a substrate by use of plural first masks, a development step for developing the first layer of the substrate and a second exposure step, executed after the development step, for executing a multiple exposure of a second layer of the substrate by use of plural second masks. A portion of at least one of the first masks has a pattern the same as a pattern formed in a portion of at least one of the second masks.
Claims11
A device manufacturing method, comprising:
- a first exposure step for performing a multiple exposure to a first layer on a substrate by use of a plurality of first masks, wherein at least a portion of a region exposed by one of the plurality of first masks is exposed by use of another first mask;
- a development step;
- and
- a second exposure step, executed after said development step, for performing a multiple exposure to a second layer on the substrate by use of a plurality of second masks, wherein at least a portion of a region exposed by use of one of the plurality of second masks is exposed by use of another second mask,
- wherein said development step is performed between said first and second exposure steps, and a portion of at least one of the first masks has a pattern that is the same as a pattern formed in a portion of at least one of the second masks.
2 more elements
Dependencies are inferred from the claim text.