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US 6,645,694 B2Granted
Pattern formation material and pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Kishimura, Masayuki Endo, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka
Life of this patent
Estimating the term…
Abstract
A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.
Claims20
A pattern formation material comprising:
- a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2;
- and an acid generator;
- wherein R1 and R2 are the same or different and selected from the group consisting of a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom;
- and R7 is a protecting group released by an acid.
2 more elements
A pattern formation material comprising:
- a polymer including a first unit represented by Chemical Formula 3, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5;
- and
- an acid generator:
- wherein R1, R2 and R8 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5, R6, R9, R10, R11 and R12 are a hydrogen atom or a fluorine atom, at least one of R3, R4, R5 and R6 being a fluorine atom;
- and R7 is a protecting group released by an acid.
3 more elements
A pattern formation material comprising:
- a polymer including a first unit represented by Chemical Formula 6, a second unit represented by Chemical Formula 7 and a third unit represented by Chemical Formula 8;
- and
- an acid generator:
- wherein R1, R2 and R13 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom;
- and R7 is a protecting group released by an acid.
3 more elements
A pattern formation material comprising:
- a polymer including a first unit represented by Chemical Formula 9, a second unit represented by Chemical Formula 10 and a third unit represented by Chemical Formula 11;
- and
- an acid generator:
- wherein R1, R8 and R14 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R9, R10, R11 and R12 are a hydrogen atom or a fluorine atom;
- and R15 is a protecting group released by an acid.
3 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:
- wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom;
- and R7 is a protecting group released by an acid;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
4 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 3, a second unit represented by Chemical Formula 4 and a third unit represented by Chemical Formula 5, and an acid generator:
- wherein R1, R2 and R8 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5, R6, R9, R10, R11 and R12 are a hydrogen atom or a fluorine atom, at least one of R3, R4, R5 and R6 being a fluorine atom;
- and R7 is a protecting group released by an acid;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
4 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 6, a second unit represented by Chemical Formula 7 and a third unit represented by Chemical Formula 8, and an acid generator:
- wherein R1, R2 and R13 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom;
- and R7 is a protecting group released by an acid;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
4 more elements
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 9, a second unit represented by Chemical Formula 10 and a third unit represented by Chemical Formula 11, and an acid generator:
- wherein R1, R8 and R14 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom;
- R9, R10, R11 and R12 are a hydrogen atom or a fluorine atom;
- and R15 is a protecting group released by an acid;
- irradiating said resist film with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure;
- and
- forming a resist pattern by developing said resist film after the pattern exposure.
4 more elements
Dependencies are inferred from the claim text.