Control system and methods for photolithographic processes
AssigneeInfineon Technologies AG
InventorsGerhard Luhn, Daniel Sarlette
Life of this patent
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Abstract
In the control method for photolithographic processes, line width errors and/or positional errors measured on processed semiconductor wafers are used to calculate correction values for the exposure intensity and/or the xy positioning of the semiconductor wafer. Optimized correction values for a subsequent batch of semiconductor wafers to be processed are calculated by averaging correction values over a number of previously calculated correction values. Only those correction values which lie within a predetermined value range are used in the average.
Claims9
A method of controlling photolithographic processes, which comprises the following method steps:
- a) photolithographically processing a batch of a predefined number of semiconductor wafers with predefined values for one of an exposure intensity and an xy-positioning;
- b) measuring one of positional errors and line width errors on the processed semiconductor wafers;
- c) calculating batch-related correction values for one of the exposure intensity and the xy position with reference to the processed batch based on parameters selected from the group consisting of the measured positional errors, line width errors, predefined desired values for the position, the line width, and predetermined algorithms for the calculation, and storing the batch-related correction values;
- d) calculating optimized correction values for processing a next batch based on the correction values from previously processed batches lying within a predetermined value range;
- and
- e) repeating method steps a) to d) with a next batch, and thereby using the optimized correction values as the predefined values.
A control system for photolithographic processes on semiconductor wafers coated with photoresist, comprising:
- a photostepper;
- a measurement station for measuring errors selected from the group consisting of positional errors and line width errors of photoresist structures produced by a photolithographic process;
- a computer/memory unit connected to said measurement station and to said photostepper, and configured to:
- calculate correction values for one of an exposure intensity and an xy position with reference to a batch being processed on a basis of errors selected from the group consisting of measured positional errors, line width errors, predefined desired value for a position, the line width, and predefined algorithms for the calculation;
- store the correction values as batch-related correction values;
- and
- calculate optimized correction values for processing a next batch based on batch-related correction values from previously processed batches lying within a predetermined value range.
Dependencies are inferred from the claim text.