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AssigneeCanon Kabushiki Kaisha
InventorsMakoto Higashikawa, Masafumi Sano
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A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in the vacuum chamber and while transporting the long substrate in a longitudinal direction, causing glow discharge between the electrode and the long substrate to deposit the microcrystalline silicon series thin film on the long substrate, wherein a plurality of bar-like shaped electrodes as the electrode are arranged such that they are perpendicular to a normal line of the long substrate and their intervals to the long substrate are all or partially different. The glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing the microcrystalline series thin film on the long substrate. An apparatus suitable for practicing the process is included.
A process for forming a microcrystalline silicon series thin film with a plasma CVD process, comprising arranging a substrate in a vacuum chamber, so as to oppose an electrode provided in said vacuum chamber, and while transporting said substrate, causing a glow discharge between said electrode and said substrate to deposit said microcrystalline silicon series thin film on said substrate, wherein a plurality of bar-shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said substrate and their intervals to said substrate are all different or in part different, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz.
Dependencies are inferred from the claim text.