Copper sputtering target assembly and method of making same
AssigneeHoneywell International Inc.
InventorsJanine K. Kardokus, Chi tse Wu, Christopher L. Parfeniuk, Jane E. Buehler
Life of this patent
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Abstract
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
Claims10
A sputter-deposited interconnect for use in an integrated circuit, having a width of about 0.18 μm or less;
- comprising at least 99.9999% purity copper and at least one micro-alloy stabilizer selected from the group consisting of Ag, Sn, In, B, Sb and P, the at least one micro-alloy stabilizer being present in an amount of from about 0.3 ppm to less than 1 ppm.
A sputter-deposited interconnect for use in an integrated circuit, having a width of about 0.18 μm or less;
- comprising at least 99.999% copper and a micro-alloy stabilizer comprising B.
A sputter-deposited interconnect for use in an integrated circuit, having a width of about 0.18 μm or less;
- comprising at least 99.999% copper and a micro-alloy stabilizer comprising P.
An interconnect for use in an integrated circuit, having a width of about 0.18 μm or less;
- comprising:
- at least 99.999% copper and at least one micro-alloy stabilizer selected from the group consisting of Ag, Sn, In, B, Sb and P, the at least one micro-alloy stabilizer being present in an amount of from about 0.3 ppm to less than 5 ppm;
- and
- at least one additional micro-alloy stabilizer selected from the group consisting of Mg, Te, and Bi;
- the at least one micro-alloy stabilizer and the at least one additional micro-alloy stabilizer being present in a total amount of less than or equal to about 10 ppm.
An interconnect for use in an integrated circuit comprising:
- at least 99.999% copper;
- a first micro-alloy stabilizer comprising at least one element selected from the group consisting of P and B;
- and
- a second micro-alloy stabilizer comprising at least one element selected from the group consisting of Ag, Sn, In, Mg, Sb and Te;
- the interconnect having a width of about 0.18 μm or less.
Dependencies are inferred from the claim text.