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US 6,643,168 B2Granted
Nonvolatile magnetic storage device
AssigneeNEC Corporation
InventorTakeshi Okazawa
Life of this patent
Estimating the term…
Abstract
A magnetic memory device of the present invention includes a first wiring conductor having a first ability to flow a current therethrough, a second wiring conductor having a second ability larger than the first ability to flow a current therethrough, a magnetic memory cell having a pinned magnetic layer coupled to the second wiring conductor, a free magnetic layer coupled to the first wiring conductor and anon-magnetic layer sandwiched between the first and second magnetic layers. The first wiring conductor is made by aluminum and the second wiring conductor is made by copper.
Claims19
A magnetic memory device comprising:
- a plurality of first wiring conductors extending in a first direction and formed at a first layer level, said first wiring conductor having a first resistivity and a first reliability;
- a plurality of second wiring conductors extending in a second direction different from the first direction and formed at a second layer level, said second wiring conductor having a second resistivity lower than said first resistivity and a second reliability higher than said first reliabiity;
- and
- a plurality of magnetic memory cells placed at points of intersection of first wiring conductors and said second wiring conductors;
- each of said magnetic memory cells having a first ferromagnetic layer which is placed on the side of said first wiring conductor and in which the direction of magnetization is can be changed, a second ferromagnetic storage layer which is placed on the side of said second wiring conductor and in which the direction of magnetization fixed, and a non-ferromagnetic layer which is placed between said first and second ferromagnetic layers.
2 more elements
A magnetic memory device comprising:
- a first wiring conductor extending in a first direction and including copper as a major component;
- a second wiring conductor extending in a second direction different from the first direction and including aluminum as a major component;
- and
- a magnetic memory cell coupled between said first and second wiring conductors, said cell having a pinned ferromagnetic layer arranged close to said first wiring conductor and apart to said second wiring conductor, a free ferromagnetic layer arranged close to said second wiring conductor and apart to said first wiring conductor, and a non magnetic layer placed between said pinned and free ferromagnetic layers.
1 more element
A magnetic memory device comprising:
- a first wiring layer;
- a second wiring layer different from said first wiring layer;
- and
- a magnetic memory cell arranged between said first and second wiring layers, said memory cell having a first magnetic film coupled to said first wiring layer, a second magnetic film coupled to said second wiring layer and a non-magnetic film sandwiched between said first and second magnetic films,
- wherein said first wiring layer has a first width and a first length in its cross section and includes a first material as a major component, and said second wiring layer has a second width and a second length in its cross section and includes a second material as a major component.
2 more elements
A magnetic memory device comprising:
- a first wiring layer;
- a second wiring layer different from said first wiring layer;
- and
- a magnetic memory cell arranged between said first and second wiring layers, said memory cell having a first magnetic film coupled to said first wiring layer, a second magnetic film coupled to said second wiring layer and a non-magnetic film sandwiched between said first and second magnetic films,
- wherein maximum current volume of said first wiring layer is larger by about 2.5 times than that of said second wiring layer.
2 more elements
A magnetic memory device comprising:
- a first wiring conductor having a first resistivity and able to flow a first wiring current;
- a second wiring conductor having a second resistivity and able to flow a second wiring current;
- and
- a magnetic memory cell located between said first and second wiring conductors, said cell having a pinned magnetic film, a free magnetic film and a non-magnetic film, wherein said first wiring current is larger than said second wiring current when a write data is written into said cell.
1 more element
Dependencies are inferred from the claim text.