Semiconductor device and a process for producing same
AssigneeSony Corporation
InventorsTomotaka Fujisawa, Chihiro Arai
Life of this patent
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Abstract
In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing the process. A p type semiconductor substrate, a collector buried region and an n type epitaxial layer are formed, a p type first impurity region is formed in the n type epitaxial layer, an n type second impurity region is formed in the first impurity region, an N+ sinker is formed, and a collector electrode is formed, with a common electrode being formed on the first and second impurity regions.
Claims17
A semiconductor device equipped with a trimming circuit having a Zener zap diode,
- said semiconductor device comprising a diode between a terminal for applying a voltage used on trimming said trimming circuit and said Zener zap diode,
- said diode comprising a first region of a first conductive type and a second region of a second conductive type which are formed on a substrate,
- said diode further comprising a third region of said second conductive type in at least a part of said first region,
- said third region being separated from said second region by said first region,
- said diode further comprising a fourth region of said first conductive type in at least in a part of said second region,
- said fourth region being separated from said first region by said second region,
- said third region being connected to said first region with wiring, and
- said fourth region being connected to said second region with wiring.
A semiconductor device equipped with a trimming circuit having a Zener zap diode,
- said semiconductor device comprising a diode between a terminal for applying a voltage used on trimming said trimming circuit and said Zener zap diode,
- said diode comprising a first region of a first conductive type formed on a substrate and a second region of a second conductive type formed in said first region,
- said diode further comprising a third region of said second conductive type in at least a part of said first region,
- said third region being separated from said second region and other regions of said second conductive type by said first region, and
- said third region is connected to said first region with wiring.
A process for producing a semiconductor device equipped with a trimming circuit having a Zener zap diode, and comprising a diode between a terminal for applying a voltage used on trimming said trimming circuit and said Zener zap diode,
- said process comprising
- a step of forming a buried region of a first conductive type in a semiconductor substrate,
- a step of forming a semiconductor layer of said first conductive type on said buried region,
- a step of forming a first region of a second conductive type in said semiconductor layer,
- a step of forming a second region of said first conductive type in said semiconductor layer,
- a step of forming a third region of said first conductive type in said first region, and
- a step of forming an electrode on said first region, said second region and said third region, to commonly connect said electrode on said first region and said third region.
A process for producing a semiconductor device equipped with a trimming circuit having a Zener zap diode, and comprising a diode between a terminal for applying a voltage used on trimming said trimming circuit and said Zener zap diode,
- said process comprising
- a step of forming a buried region of a second conductive type in a semiconductor substrate,
- a step of forming a semiconductor layer of said second conductive type on said buried region,
- a step of forming a first region of a first conductive type and a fourth region of said first conductive type in said semiconductor layer,
- a step of forming a second region of said second conductive type on said semiconductor layer,
- a step of forming a third region of said second conductive type in said first region of said first conductive type,
- a step of forming an electrode on said first region and said third region, to commonly connect thereto, and
- a step of forming an electrode on said second region and said fourth region, to commonly connect thereto.
Dependencies are inferred from the claim text.