Semiconductor device with resistor layer having heat radiation path to semiconductor substrate
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYasuo Yamaguchi
Life of this patent
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Abstract
A resistor layer (5) is formed on an isolation insulating film (4) selectively formed in a major surface (1S) of a semiconductor substrate (1). An interlayer insulation film (7) covering the resistor layer (5) has first and second plugs (9, 19) buried therein in the form of buried interconnections. The first and second plugs (9, 19) provide connection not only between an end portion of the resistor layer (5) and first and second interconnection layers (8, 18) but also between the end portion of the resistor layer (5) and the major surface (1S) of the semiconductor substrate (1).
Claims10
A semiconductor device comprising:
- a semiconductor substrate having a major surface;
- an isolation insulating film selectively formed on said major surface;
- a resistor layer formed on said isolation insulating film;
- an interlayer insulation film covering said semiconductor substrate, said isolation insulating film and said resistor layer;
- first and second interconnection layers disposed on said interlayer insulation film;
- a first conductive plug selectively buried in said interlayer insulation film and having an upper end connected to said first interconnection layer and a lower end connected to one end of said resistor layer and a first portion of said major surface of said semiconductor substrate which is adjacent to said isolation insulating film,
- said first conductive plug being rectangular in cross section along said major surface with its long sides extending along a main direction to connect said one end and the other end of said resistor layer and its short sides extending along a direction orthogonal to said main direction;
- and
- a second conductive plug selectively buried in said interlayer insulation film and having an upper end connected to said second interconnection layer and a lower end connected to said other end of said resistor layer.
Dependencies are inferred from the claim text.