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US 6,642,603 B1Granted
Same conductivity type highly-doped regions for antifuse memory cell
AssigneeMatrix Semiconductor, Inc.
InventorN. Johan Knall
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Abstract
A memory cell for a 3-D integrated circuit memory is described. An antifuse region is sandwiched between two heavily doped regions of the same conductivity type.
Claims20
A memory cell comprising:
- first and second spaced-apart conductors;
- first and second heavily doped regions of a first conductivity type, the first region being coupled to the first conductor;
- an antifuse region sandwiched between the first and second regions;
- and
- a third doped region of a second conductivity type in contact with the second doped region and the second conductor, the first and third regions forming a diode.
2 more elements
In a three-dimensional memory having a plurality of cells formed in a plurality of levels, each cell comprising:
- first and second heavily doped regions of a first conductivity type;
- an antifuse region sandwiched between the first and second regions;
- a third region of a second conductivity type being coupled to the first doped region, the first and third regions forming a diode;
- at least one of the first and second regions being a dedicated region for the cell and not providing a conductive path to other cells in the array.
1 more element
Dependencies are inferred from the claim text.