US 6,642,595 B1 · Magnetic random access memory with low writing current

Abstract

A magnetic random access memory (MRAM) with a low write current, characterized in that an improved MRAM structure is composed of a plurality of conductive metal pillars disposed on both sides of a magnetic tunnel junction (MTJ) cell functioning as a memory cell. The conductive metal pillars generate a superposed magnetic field so as to reduce the write current into the MTJ cell, thereby reducing the power consumption during the operation of an MRAM. The metal pillars are formed by employing a modified mask so that a plurality of plugs are formed by via etching and metal deposition. Moreover, at least one turn of conductive metal coil is disposed near the memory cell. The enhanced magnetic field thus generated results in a lowered write current as well as reduced power consumption.

Claims10

Dependent claims

A magnetic random access memory (MRAM) with a low write current, composed of a plurality of magnetic memory elements, each magnetic memory element comprising:

a write line, providing said magnetic memory element with a write current channel;
a bit line, providing said magnetic memory element with a writing current channel and a read current channel;
a magnetic memory cell, functioning as a magnetic material in said magnetic random access memory so as to change the magnetization orientation and thus the data state;
a central metal pillar, connected to said magnetic memory cell and said bit line;
and
a plurality of side metal pillars, connected to said write line, so as to enhance the magnetic field through said magnetic memory cell induced by the current through said metal pillars;
wherein said magnetic memory element outputs a read signal from a current controlling element.

4 more elements

Dependencies are inferred from the claim text.

Magnetic random access memory with low writing current

Life of this patent

Magnetic random access memory with low writing current

Life of this patent

Abstract

Claims10