Back to results
US 6,642,584 B2Granted
Dual work function semiconductor structure with borderless contact and method of fabricating the same
AssigneeInternational Business Machines Corporation
InventorsQiuyi Ye, William R. Tonti, Yujun Li
Life of this patent
Estimating the term…
Abstract
A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.
Claims11
A semiconductor structure comprising:
- a first material having a first contact hole formed therein, a horizontal surface of the first material being adjacent to the first contact hole;
- a second material extending over the first material, the second material having a second contact hole formed therein, the second contact hole extending over the first contact hole and exposing a portion of said horizontal surface of said first material;
- a conductor in said first contact hole;
- a spacer lining the second contact hole and extending to said conductor, wherein said spacer has a dimension sufficient so that said horizontal surface of said first material is unexposed;
- and
- wherein said conductor is recessed below said horizontal surface.
3 more elements
Dependencies are inferred from the claim text.