Power semiconductor device having layered structure of power semiconductor elements and terminal members

A power semiconductor device, comprising:

• first to third terminal members each including an element arrangement portion having first and second main surfaces which are opposed to each other;
• at least one first power semiconductor element having first and second main surfaces which are opposed to each other and first and second main electrodes provided on said first and second main surfaces, respectively;
• and
• at least one second power semiconductor element having first and second main surfaces which are opposed to each other and first and second main electrodes provided on said first and second main surfaces, respectively,
• wherein said at least one first power semiconductor element has the same structure as said at least one second power semiconductor element,
• said second main surface in said element arrangement portion of said first terminal member is joined to said first main electrode of said at least one first power semiconductor element,
• said second main electrode of said at least one first power semiconductor element is joined to said first main surface in said element arrangement portion of said second terminal member,
• said second main surface in said element arrangement portion of said second terminal member is joined to said first main electrode of said at least one second power semiconductor element, and
• said second main electrode of said at least one second power semiconductor element is joined to said first main surface in said element arrangement portion of said third terminal member,
• said power semiconductor device further comprising
• a package for housing said at least one first power semiconductor element and said at least one second power semiconductor element,
• wherein said first to third terminal members each have an external connection portion drawn out of said package.