Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitor
AssigneeInfineon Technologies AG
InventorsEmmerich Bertagnolli, Till Schlösser, Josef Willer
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Abstract
A dynamic random access memory capacitor and to a method for producing the same are described. A first (bottom) electrode of the capacitor has a grained surface made of tungsten silicide placed on a tungsten silicide layer which is disposed near a surface of a electrode body. The graining of the tungsten silicide layer is formed by tempering a temporarily present double layer that is formed of an understoichiometric tungsten silicide layer and a silicon layer. The double layer is formed on the tungsten silicide layer.
Claims11
A method for fabricating a miniaturized capacitor, which comprises the steps of:
- providing an oxide layer having a recess formed therein;
- fabricating a macroscopically formed body forming part of a first electrode in the recess of the oxide layer, the body having a region formed of tungsten silicide;
- coating the region of the body with a layer of substoichiometric tungsten silicide, WSix, with x being between 1.5 and 1.9;
- applying a further layer of additive-free silicon to the layer of sustoichiometirc tungsten silicide resulting in a two-layer structure;
- heat treating the body with the two-layer structure in an inert atmosphere, until a grained layer substantially formed of the layer of substoichiometric tungsten silicide is formed;
- coating the body with the grained layer with a dielectric layer;
- and
- producing a second electrode on the dielectric layer.
Dependencies are inferred from the claim text.