Method for forming semiconductor memory device having a fuse

A method of fabricating a semiconductor device, comprising:

• providing a substrate including a first area, a second area and a global step difference between the first area and the second area, wherein the substrate comprises a fuse formed in the second area and a conductive layer;
• forming an interlayer insulating layer on the substrate;
• simultaneously removing a fourth portion of the interlayer insulating layer and a fifth portion of the interlayer insulating layer in the interlayer insulating laver in the second area, thereby forming a contact hole through the interlayer insulating layer and defining a first recess in the second area, wherein the contact hole exposes a first portion of the conductive layer, and wherein the first recess is defined over the fuse;
• forming a passivation layer on the interlayer insulating layer;
• forming a fuse opening on the fuse, wherein the fuse opening is formed through the passivation layer and the first recess;
• forming a conductive plug in the contact hole;
• forming a metal pattern on the interlayer insulating layer, wherein the metal pattern is electrically connected to the conductive plug;
• forming an intermetal insulating layer on the metal pattern;
• and
• simultaneously removing a first portion of the intermetal insulating layer and a second portion of the intermetal insulating layer in the second area, thereby forming a via hole through the intermetal insulating layer and defining a second recess in the intermetal insulating layer in the second area, wherein the second recess is defined over the fuse and exposes a third portion of the conductive layer.