Semiconductor device and manufacturing method thereof
AssigneeOki Electric Industry Co., Ltd.
InventorMichiko Yamauchi
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Abstract
The present invention provides a semiconductor device that reduces the junction leak current and achieves an improvement in the reliability of the gate oxide film by minimizing divot formation and the occurrence of a kink and a method of manufacturing such a semiconductor device. A pad oxide film and a silicon nitride film are formed on an Si substrate and a groove-like trench is formed through photolithography and etching. The liner oxide of the trench are oxidized through oxidizing/nitriding. Then, the trench is filled with an insulating film, the insulating film is planarized and the silicon nitride film and the pad oxide film are removed. Next, a field area is formed and a transistor is formed by following specific steps. By forming a trench liner oxide film containing nitrogen, stress is reduced.
Claims6
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a pad oxide film and a silicon nitride film over the substrate;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step, an nitriding step and another oxidizing step;
- and
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a pad oxide film and a silicon nitride film over the substrate;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step;
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate;
- forming a sacrificial oxide layer by performing an oxidizing step, a nitriding step and another oxidizing step;
- and
- performing an ion implantation step.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a pad oxide film and a silicon nitride film over the substrate;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step, an nitriding step and another oxidizing step;
- and
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate;
- and
- forming a sacrificial oxide layer by performing an oxidizing step, a nitriding step and another oxidizing step.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- forming a pad oxide film and a silicon nitride film over the substrate;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step, an nitriding step and another oxidizing step;
- and
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate;
- and
- forming a gate oxide by an oxidizing step, a nitriding step and another oxidizing step.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- chemical vapor depositing a TEOS pad oxide film over the substrate and annealing the pad oxide film by a rapid thermal anneal step
- forming a silicon nitride film over the pad oxide;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step, an nitriding step and another oxidizing step;
- and
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate;
- and
- forming gate oxide layer by performing an oxidizing step, a nitriding step and another oxidizing step.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- chemical vapor depositing a TEOS pad oxide film over the substrate and annealing the pad oxide film by a rapid thermal anneal step
- forming a silicon nitride film over the pad oxide;
- forming a sacrificial local oxidation of silicon layer by an oxidizing step, a nitriding step and another oxidizing step;
- forming a trench;
- forming a liner oxide at least in the trench by an oxidizing step, a nitriding step and another oxidizing step;
- and
- substantially filling the trench with an insulating film, performing a planarizing step to remove the pad oxide and the silicon nitride film that are over the substrate;
- and
- forming gate oxide layer by performing an oxidizing step, a nitriding step and another oxidizing step.
Dependencies are inferred from the claim text.