Non-volatile memory capable of preventing antenna effect and fabrication thereof
AssigneeMacronix International Co., Ltd.
InventorsTung-Cheng Kuo, Chien-Hung Liu, Shyi-Shuh Pan, Shou-Wei Huang
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Abstract
A non-volatile memory capable of preventing the antenna effect and the fabrication thereof are described. The non-volatile memory includes a word-line having a high resistance portion and a memory cell portion on a substrate and a charge trapping layer located between the word-line and the substrate. The high resistance portion is electrically connected with a grounding doped region in the substrate and the memory cell portion is electrically connected with a metal interconnect over the substrate.
Claims14
A method for fabricating a non-volatile memory capable of preventing an antenna effect, comprising the steps of:
- forming a charge trapping layer on a substrate;
- forming a word-line on the charge trapping layer, the word-line having a memory cell portion and a high resistance portion;
- forming a grounding doped region in the substrate;
- electrically connecting the grounding doped region and the high resistance portion of the word-line;
- forming a metal interconnect over the substrate to electrically connect with the memory cell portion of the word-line;
- and
- blowing the high resistance portion of the word-line.
A method for fabricating a non-volatile memory capable of preventing an antenna effect, comprising the steps of:
- providing a substrate;
- forming sequentially a charge trapping layer, a polysilicon layer and a metal silicide layer on the substrate;
- patterning the metal silicide layer, the polysilicon layer and the charge trapping layer to form a word-line having a memory cell portion and a high resistance portion;
- forming a grounding doped region in the substrate;
- forming a first contact on the substrate to electrically connect the grounding doped region and the high resistance portion of the word-line;
- forming a second contact over the substrate to electrically connect with the memory cell portion of the word-line;
- and
- blowing the high resistance portion of the word-line.
Dependencies are inferred from the claim text.