Flash memory cell and method of manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsSung Mun Jung, Sung Bo Sim, Kwi Wook Kim
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Abstract
There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.
Claims19
A method of manufacturing a flash memory cell, comprising the steps of:
- forming first and second insulating films on a silicon substrate and patterning the second and first insulating films sequentially to form a circular hole so that a given portion of the silicon substrate can be exposed;
- forming a tunnel oxide film on the silicon substrate exposed within the hole and then forming a floating gate having a spacer shape on a side wall of the hole;
- after forming the floating gate, injecting impurities into the silicon substrate exposed within the hole to form a junction area, and then forming a dielectric film on the floating gate;
- and
- depositing polysilicon on the entire upper surface so that the hole can be buried and then patterning the resultant to form a control gate.
A method of manufacturing a flash memory cell, comprising the steps of:
- forming first and second insulating films on a silicon substrate and patterning the second and first insulating films to form a hole so as to expose a portion of the silicon substrate;
- forming a tunnel oxide film on the silicon substrate exposed within the hole and then forming a floating gate on a tide wall of the hole, the floating gate having an annular sidewall provided with an open lower annular end, and an open upper annular end;
- after forming the floating gate, injecting impurities into the silicon substrate exposed within the hole to form a junction area, and then forming a dielectric film on the floating gate;
- and
- depositing polysilicon on the entire upper surface so that the hole can be buried and then patterning the resultant to form a control gate.
A method of manufacturing a flash memory cell, comprising the steps of:
- forming first and second insulating films on a silicon substrate and patterning the second and first insulating films to form a hole so as to expose a first portion of the silicon substrate;
- forming a tunnel oxide film on the silicon substrate exposed within the hole and then forming a floating gate on a side wall of the hole while still leaving part of said first portion of the silicon substrate exposed;
- injecting impurities into the silicon substrate exposed within the hole to form a junction area, and then forming a dielectric film on the floating gate;
- and
- depositing polysilicon on the entire upper surface so that the hole can be buried and then patterning the resultant to form a control gate.
Dependencies are inferred from the claim text.