Bipolar transistor manufacturing
AssigneeSTMicroelectronics S.r.l.
InventorsDidier Dutartre, Alain Chantre, Michel Marty, Sébastien Jouan
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Abstract
A method of manufacturing a bipolar transistor in a single-crystal silicon substrate of a first conductivity type, including a step of carbon implantation at the substrate surface followed by an anneal step, before forming, by epitaxy, the transistor base in the form of a single-crystal semiconductor multilayer including at least a lower layer, a heavily-doped median layer of the second conductivity type, and an upper layer that contacts a heavily-doped emitter of the first conductivity type.
Claims22
A method of manufacturing a bipolar transistor using a single-crystal silicon substrate of a first conductivity type, including steps of:
- implanting carbon at a surface of the substrate;
- annealing the substrate;
- and
- after the step of annealing, forming, by epitaxy, a transistor base in the form of a semiconductor multilayer including at least a lower layer, a heavily-doped median layer of a second conductivity type, and an upper layer that contacts a heavily-doped emitter of the first conductivity type, wherein a collector of the bipolar transistor corresponds to an upper portion of the substrate under the transistor base.
A bipolar hetero-junction transistor, including a collector buried in a silicon substrate, a silicon base multilayer formed by epitaxy on the substrate and underlying a silicon emitter, a surface of the substrate further including an area in which carbon atoms are present.
A method of forming a semiconductor device, comprising acts of:
- implanting a substrate comprising a first region of the semiconductor device with carbon atoms, wherein the first region is of a first conductivity type;
- and
- depositing an epitaxial layer above the substrate, wherein the epitaxial layer comprises a second region of the semiconductor device, and wherein the second region is of a second conductivity type.
Dependencies are inferred from the claim text.