Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide
AssigneeTexas Instruments Incorporated
InventorsAntonio L. P. Rotondaro, Mark R. Visokay
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Abstract
A method of forming a first and second transistor. The method provides a semiconductor surface (20). Th method also forms a gate dielectric (30) adjacent the semiconductor surface. Further, the method forms a first transistor gate electrode (902) with a metal portion (402) in a fixed relationship with respect to the gate dielectric. Still further, the method forms a second transistor gate electrode (901) with a silicide (701) of the metal portion in a fixed relationship with respect to the gate dielectric.
Claims13
A method of forming a plurality of transistors including a first and second transistor, comprising the steps of:
- providing a semiconductor surface;
- forming a gate dielectric over the semiconductor surface;
- forming a metal layer over said gate dielectric;
- forming a first material layer over a first region of said metal layer wherein said first material layer comprises silicon;
- forming a first transistor gate electrode from a portion of said metal layer;
- and
- forming a second transistor gate electrode by annealing said metal layer and said first material layer to form a metal silicide.
A method of forming a plurality of transistors including a first and second transistor with differing gate electrodes, comprising the steps of:
- providing a semiconductor surface;
- forming a gate dielectric ver the semiconductor surface;
- forming a first metal layer over said gate dielectric;
- forming a first material layer over a first region of said first metal layer wherein said first material layer comprises silicon;
- annealing said first material layer and said underlying first metal layer to form a metal silicide;
- forming a second metal layer over said first metal layer and said metal silicide layer;
- forming a first transistor gate electrode comprising a portion of said first metal layer and said second metal layer;
- an
- forming a second transistor gate electrode comprising a portion of said metal silicide and said second metal layer.
Dependencies are inferred from the claim text.