Resist compositions comprising silyl ketals and methods of use thereof
AssigneeInternational Business Machines Corporation
InventorsWu-Song Huang, David R. Medeiros
Life of this patent
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Abstract
A chemically amplified resist composition comprises an aqueous base soluble polymer or copolymer having one or more polar functional groups, wherein at least one of the functional groups is protected with a cycloaliphatic silyl ketal group but may also include other protecting groups as well as unprotected acidic functionalities. A ratio of protected to unprotected acidic functionalities is preferably selected to most effectively modulate a solubility of the resist composition in an aqueous base or other developer. The resist composition further comprises an acid generator, preferably a photoacid generator (PAG), and a casting solvent, and may also include other components, such as, a base additive and/or surfactant.
Claims33
A chemically amplified resist composition comprising:
- a polymer or copolymer having one or more polar functional groups, wherein at least one of the functional groups is protected whit a cycloaliphatic silyl ketal group;
- an acid generator;
- and
- a solvent for the polymer or copolymer.
A method of patterning a substrate comprising the steps of:
- applying a coating of resist composition to the substrate, the resist composition comprising a polymeric material that is at least partially protected with a cycloaliphatic silyl ketal group;
- patternwise exposing the resist composition to an imaging radiation source;
- developing and removing areas of the resist composition exposed to the imaging radiation source;
- etching into the substrate in the exposed areas;
- and
- removing any remaining resist composition from the substrate.
A method of patterning a substrate comprising the steps of:
- applying an organic underlayer composition to the substrate;
- applying an imaging layer to the underlayer, the imaging layer comprising a resist composition containing a polymeric material that is at least partially protected with a cycloaliphatic silyl ketal group;
- patternwise exposing the resist composition to an imaging radiation source;
- developing and removing areas of the resist composition exposed to the imaging radiation source;
- etching into the underlayer in the exposed areas;
- etching into the substrate in areas exposed by the underlayer etching step;
- and
- removing any remaining resist composition and underlayer composition from the substrate.
Dependencies are inferred from the claim text.