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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYukio Inazuki, Tamotsu Maruyama, Mikio Kojima, Hideo Kaneko, Masataka Watanabe, Satoshi Okazaki
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A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
A phase shift mask blank comprising a transparent substrate and at least one phase shift film layer made of molybdenum silicide oxide carbide or molybdenum silicide oxide nitride carbide on the substrate, wherein the substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching such that the etch selectivity B/A is at least 5.0.
A method of manufacturing a phase shift mask blank having a transparent substrate and at least one phase shift film layer made of molybdenum silicide oxide carbide or molybdenum silicide oxide nitride carbide on the substrate, the method comprising the step of carrying out reactive sputtering using a molybdenum and silicon-containing target and using a carbon-containing sputtering gas, wherein the substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etch rate B when the blank is patterned by reactive ion etching such that the etch selectively B/A is at least 5.0.
A phase shift mask blank comprising a transparent substrate and at least one phase shift film layer made of molybdenum silicide oxide carbide (MoSiOC) having a composition of 5-25 atom % molybdenum, 10-35 atom % silicon, 30-70 atom % oxygen, and 3-20 atom % carbon, or molybdenum silicide oxide nitride carbide (MoSiONC) having a composition of 5-25 atom % molybdenum, 10-35 atom % silicon, 30-60 atom % oxygen, 5-30 atom % nitrogen, and 3-20 atom % carbon on the substrate, wherein the substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching such that the etch selectivity B/A is at least 5.0.
A method of manufacturing a phase shift mask blank having a transparent substrate and at least one phase shift film layer made of molybdenum silicide oxide carbide (MoSiOC) having a composition of 5-25 atom % molybdenum, 10-35 atom % silicon, 30-70 atom % oxygen, and 3-20 atom % carbon, or molybdenum silicide oxide nitride carbide (MoSiONC) having a composition of 5-25 atom % molybdenum, 10-35 atom % silicon, 30-60 atom % oxygen, 5-30 atom % nitrogen, and 3-20 atom % carbon on the substrate, the method comprising the step of carrying out reactive sputtering using a molybdenum and silicon-containing target and using a carbon-containing sputtering gas, wherein the substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etch rate B when the blank is patterned by reactive ion etching such that the etch selectively B/A is at least 5.0.
Dependencies are inferred from the claim text.