Loading patent…
AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsEiichi Asayama, Masataka Horai, Shigeru Umeno, Shinsuke Sadamitsu, Yasuo Koike, Kouji Sueoka, Hisashi Katahama
Estimating the term…
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.
A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3.
A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more and boron doping at a concentration of 1×1017 atoms/cm3 or more.
A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more, carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and boron doping at a concentration of 1×1017 atoms/cm3 or more.
Dependencies are inferred from the claim text.