Integrated circuit device and its manufacturing method

An integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, wherein the barrier layer is represented by the formula:

• TaOxNy wherein 0.1≦x<0.2 and 0.3≦y<0.5.

An integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, wherein the barrier layer is represented by the formula:

• Ta1−aMaObNc wherein M is at least one element selected from the group consisting of elements of Groups 3, 4, 6, 7, 8, 9, 10, 12, 13 and 14 of the long form of the Periodic Table and wherein 0<a<1, 0.001≦b<0.2 and 0.001≦c<0.5.

A method for producing an integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, which comprises:

• forming a barrier layer by sputtering against a Ta target in a gas phase comprising oxygen or carbon dioxide and nitrogen on a dielectric layer, the barrier layer which is formed having a composition of the formula:
• TaOxNy, wherein 0.1≦x<0.2 and 0.3≦y<0.5.

A method for producing an integrated circuit device having a Cu wiring layer, a barrier layer therefor and a dielectric layer, which comprises:

• forming a barrier layer by sputtering against a target comprising Ta and element M in a gas phase comprising oxygen or carbon dioxide and nitrogen on a dielectric layer, the barrier layer which is formed having a composition of the formula:
• Ta1−aMaObNc, wherein M is at least one member selected from the group consisting of elements of Groups 3, 4, 6, 7, 8, 9, 10, 12, 13 and 14 of the long form of the Periodic Table, 0<a<1, 0.001≦b<0.2 and 0.001≦c<0.5.