Capacitor dielectric having perovskite-type crystalline structure
AssigneeMicron Technology, Inc.
InventorJerome M. Eldridge
Life of this patent
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Abstract
A capacitor construction includes an inner electrode, an inner dielectric layer over the inner electrode, an outer dielectric layer over the inner dielectric layer, and an outer electrode over the outer dielectric layer. The inner dielectric layer can include an oxidized alloy of at least two metals in a perovskite-type crystalline structure. The outer dielectric layer can include an oxide of a material wherein the material exhibits passivation against carbon and nitrogen reaction. As an example, the capacitor construction can further include a middle dielectric layer between the inner and outer dielectric layers. The middle dielectric layer can include an oxidized alloy of at least two metals in a perovskite-type crystalline structure.
Claims21
A capacitor construction comprising:
- an inner electrode;
- an inner dielectric layer over the inner electrode, the inner dielectric layer comprising an oxidized alloy of at least two metals in a perovskite-type crystalline structure;
- an outer dielectric layer over the inner dielectric layer, the outer dielectric layer comprising an oxide of a material and the material exhibiting passivation against carbon and nitrogen reaction;
- and
- an outer electrode over the outer dielectric layer.
A capacitor intermediate construction comprising:
- an inner electrode;
- an inner dielectric layer over the inner electrode, the inner dielectric layer comprising an oxidized alloy of at least two metals in a perovskite-type crystalline structure;
- and
- a passivation layer over the inner dielectric layer, the passivation layer exhibiting passivation against carbon and nitrogen reaction with the inner dielectric layer.
The intermediate construction of wherein the perovskite-type crystalline structure comprises PbTiO3or PbZryTi1-yO3.
Dependencies are inferred from the claim text.